Li Hui

assistant professor

Email:huili007@hnas.ac.cn

Li Hui, an assistant professor at the Micius Laboratory, mainly focuses on the research of wide bandgap semiconductor device integration technology and TCAD simulation. Her main research directions include: (1) the development and application of oxide thin-film transistors; simulation of thin-film transistors and material properties by TCAD; (2) research on flexible transparent semiconductor devices; (3) study on the properties of interface defects. She has led one Key Technology Research Project in Henan province.

Education Background

2012.09-2016.06, Southwest University, Physics major, Bachelor of Science

2016.09-2021.06, Wuhan University, Condensed Matter Physics Major, Doctor of Science

Work Experience

2023.07-2024.07, Patent Examination Cooperation (Henan) Center of the Patent Office, CNIPA patent examiner

2024.07-up to now, Micius Laboratory, assistant professor

Research grant

Key Technology Research Project of Henan province (2025-2026), Principal Investigator (Under Implementation)

Publications and patents in the past five years

1.Hui Li, Hao Wu*, Chang Liu* et al. Self-assembly of carbon black/ AAO templates on nanoporous Si for broadband infrared absorption, ACS Applied Materials & Interfaces 12, 4081-4087 (2020).

2.Hui Li, Hao Wu*, Chang Liu* et al. Tree-like structures of InN nanoparticles on agminated anodic aluminum oxide by plasma-assisted reactive evaporation, Applied Surface Science 503, 144309 (2020).

3.Chang Liu, Hui Li, Heng Zhang, Dingbo Zhang, Hao Wu. Infrared absorption doped silicon and its preparation method: China, ZL201910123976.0, Date of Patent: 2021-09-03.

4. Hui Li, Chang Liu, Xi Su, Heng Zhang, Jiahao Yin. A flexible transparent oxide thin-film transistor and its preparation method. China, Application Number: 202510504618X, Date of Application: 2025-4-21.

5. Hui Li, Chang Liu, Xi Su, Yisheng He, Heng Zhang. A vertical channel-all-around InGaO thin-film transistor and its preparation method. China，Application Number: 2025105048486, Date of Application: 2025-4-21.