Research Interest
(1) Epitaxial growth of 6-/8-inch GaN/Ga2O3 wafer
(2) GaN-based high electron mobility transistor (HEMT)
(3) Ga2O3-based power electronic device
(4) GaN-based optoelectronic devices
Education/Work Information
Sept. 2010-Jun. 2014 B. S. in School of Chemical Engineering and Technology, Shenyang University of Chemical Technology University.
Sept. 2014-Jun. 2017 M. S. in School of Chemical Engineering, Dalian University Of Technology.
Sept. 2021-Jun. 2025 Ph. D in School of Power and Mechanical Engineering, Wuhan University.
Jul. 2025-present Assistant Researcher in Micius Laboratory.
Publications and patents in the past five years
1.Liu, X.; Lv, Z.; Liao, Z.; Sun, Y; Zhang, Z.; Sun, K.; Zhou, Q.; Tang, B.; Geng, H.; Qi, S.; Zhou, S. Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft. Microsystems & Nanoengineering 2024, 10, 110.
2.Liu, X..; Zhou, S.; Lv, Z.; Tang, B.; Geng, H.; Liao, Z.; Jiang, J.; Zhang, Z.; Qi, S.; Liu, S. Boosting performance of AlGaN-based ultraviolet-C light-emitting diodes via high-quality AlN template. IEEE Transactions on Electron Devices 2025, 72(4), 1833-1838.
3.Liu, X.; Song, J.; Lv, Z.; Liao, Z.; Geng, H.; Zhang, Z.; Jiang, J.; Tang, B.; Qi, S.; Liu, S; Zhou, S. Doping engineering strategy for boosting performance of AlGaN-based deep-ultraviolet light-emitting diodes. Crystal Growth & Design 2025, 25, 1833-1841.
4.Liu, X.; Liao, Z.; Song, J.; Lv, Z.; Zhang, Z.; Jiang, J.; Qi, S.; Zhou, S. High-efficiency deep ultraviolet light-emitting diodes via δ-doping modulation of thin p-GaN contact layer, Optics Letters 2025, 50(13), 561731.
5.Liu, X.; Zhou, S. Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection. Chinese Optics Letters 2022, 20(11), 112501.
6.Zhou, S.; Zhao, X.; Du, P.; Zhang, Z.; Liu, X.; Liu, S.; Guo, L. Application of patterned sapphire substrate for III-nitride light-emitting diodes. Nano scale 2022, 14, 4887-4907.
7. Zhang, Z.; Zhou, Q.; Liu, X.; Lv, Z.; Tang, B.; Geng, H.; Qi, S.; Zhou, S. Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes. Optics Letters 2024, 49(8), 2049-2052.
8.Zhang, Z.; Geng, H.; Lv, Z.; Tang, B.; Liu, X.; Jiang, J.; Qi, S.; Liu, S.; Zhou, S. Manipulating precursors of group-III nitrides for high-Al-content p-AlGaN toward efficient deep ultraviolet light emitters. Applied Physical Letters 2024, 125, 241109.
9.Zhang, Z.; Zhou, S.; Liao, Z.; Jiang, J.; Geng, H.; Lv, Z.;Liu, X.; Qi, S.; Liu, S. AlGaN Polarized Ultrathin Tunneling Junction Deep Ultraviolet Light-Emitting Diodes. Nano Letters 2025, 25(5), 1898-1906.
10.周圣军，刘旭，深紫外Micro-LED芯片阵列及制备方法。中国，发明专利，专利号：ZL 2022 1 0805276.1（授权）
11.周圣军，刘旭，一种用于全彩显示的RGB混合集成Micro-LED芯片阵列的制备方法。中国，发明专利，专利号：ZL 2022 1 1134424.1（授权）
12.周圣军，刘旭，杜鹏，深紫外Micro-LED芯片阵列的制备方法。中国，发明专利，申请号：CN 202311819068.8（公开）
13.周圣军，刘旭，蒋晶晶，一种AlN缓冲层、LED晶圆外延片及其的制备方法。中国，发明专利，申请号：CN 202410849483.6（公开）
14.周圣军，刘旭，深紫外Micro-LED芯片及制备方法。中国，发明专利，申请号：CN 202510659481.5（公开）
15.周圣军，刘旭，可拉伸RGB集成的Micro-LED芯片阵列及其制备方法。中国，发明专利，申请号：CN 202510975475.6（公开）
