Feng Taixiang

Research assistant

taixiang.feng @hnas.ac.cn

Feng Taixiang, PhD, is currently an assistant researcher at Mozi Laboratory. He is mainly engaged in the research of transition metal oxide semiconductors and optoelectronic semiconductor green hydrogen energy technology. She presided over and participated in two provincial projects, one national project, and was the first author of five SCI papers and three patents. The main research directions include: (1) defect engineering of transition metal oxide semiconductor materials, studying the regulatory mechanism of defect states on band structure and surface reaction dynamics, and improving the efficiency of photoelectrochemical water splitting. (2) developing efficient and stable semiconductor-electrolyte interface systems, and studying the influence of external fields on charge transfer/recombination behavior. (3) developing MIST-CVD equipment for gallium oxide semiconductor materials, studying growth dynamics and defect control, and promoting its application in power electronic devices. (4) controlling the interface states of silicon-based oxide heterojunctions (Si/SiO?/Al), and optimizing device breakdown characteristics and carrier injection efficiency.

Education Background

2021 – 2025 Universiti Sains Malaysia   Ph.D. in Applied and Engineering Physics

2018 – 2020 Universiti Sains Malaysia   Master of Solid-State Physics

2010 – 2014 Harbin Normal University   Bachelor of Physics

Work Experience

9.2014 – 6.2018 Lecturer of Physics, Huang He Technology College, China

7. 2021 – 6.2022 Graduate Research Assistant, School of Physics, Universiti Sains Malaysia

2024.08-present Assistant Researcher, Micius Lab

Honors and Awards

11. 2012 University scholarship, Second Prize Scholarship, Harbin Normal University

09.2016 Excellent counselor of Henan Province

Research grant

?  International Science and Technology Cooperation Grant,“Study on the morphology and structure regulation of TiO₂ and its photoelectrochemical water splitting hydrogen production properties”, principal investigator, 2025-2027, in progress

?  Henan Provincial Science and Technology Research Project，“New MIST CVD R&D design for gallium oxide semiconductor R&D and mass production”, (2025-2027) Co-researcher, in progress

?  Malaysian Ministry of Higher Education Project , “Investigation of the roles of hydrogenation of TiO₂ Nanotubes in enhancing the Photoelectrochemical properties for water splitting (FRGS/1/2020/STG05/USM/02/4)”, 2020-2024, Co-researcher

Publications and patents in the past five years

Taixiang. Feng and F. K. Yam, “The influence of hydrothermal treatment on TiO₂ nanostructure films transformed from titanates and their photoelectrochemical water splitting properties,” Surfaces and Interfaces, vol. 38, no. October 2022, p. 102767, Jun. 2023.

Taixiang. Feng and F. K. Yam, “Photoelectrochemical properties of anatase TiO₂ nanostructures prepared by hydrothermal method: Effect of illumination and external bias on charge transport,” Ceram. Int., Mar. 2024.

Taixiang. Feng and F. K. Yam, “A comparative study of TiO₂ nanostructures prepared by one-step and two-step hydrothermal method: Physical and photoelectrochemical properties,” Phys. B Condens. Matter, vol. 684, p. 415996, Jul. 2024.

Taixiang. Feng and F. K. Yam, “A Review of One-dimensional TiO₂ Nanostructured materials for photoelectrochemical water splitting applications，” Phys. B Condens. Matter, vol. 714, p. 417466, Oct. 2025