Li Pengkun

 Assistant  Research

Email: lpk8168@hnas.ac.cn

Li Pengkun, Assistant Researcher at the Micius Laboratory, primarily engages in research on the growth and fundamental properties of wide-bandgap and ultra-wide-bandgap semiconductor materials. His main research directions include: (1) Growth and optoelectronic property studies of Ga?O? crystals, films, and nanomaterials; (2) Preparation and property studies of GaN single-crystal thick films and novel nanostructures; (3) Preparation of novel wide-bandgap semiconductor materials and their photoelectric responsive properties. He has participated in the National Key Research and Development Program of China and National Nature Science Foundation of China. As the first author and corresponding author, he has published 13 SCI papers in international journals.

Education Background

2013.09-2017.07   Luoyang Normal University   Chemistry   Bachelor of Science

2017.09-2020.06   Fujian Normal University (jointly trained with Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences)    Material Chemistry   Master of Science

2020.09-2023.06   Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences   Material Science   Doctor of Technical Science

Work Experience

2023.06-2025.07   Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences   Postdoctoral

2025.08-Present   MOZI Laboratory   Research Assistant

Honors and Awards

2023   University of Chinese Academy of Sciences “Three Good Student”

2017   Henan Province Outstanding Recent Graduate

Publications and patents in the past five years

1. Pengkun Li*, Kai Peng, Difei Xue, Chang Liu, Lilin Wang*, Zhicheng Zhang, Peiwen Lv, Chenlong Chen*,High-performance solar-blind deep ultraviolet photodetector based on the H₂-annealed amorphous ZnGa₂O₄ and its preliminary exploration in image sensor, Applied Physics Letters Accept, (2025). DOI: 10.1063/5.0256450.

2. Chang Liu, Lilin Wang, Zhicheng Zhang, Wusi Zhang, Chenlong Chen, Pengkun Li*, Array-type epitaxial growth of inclined nonpolar GaN nanorods on (010) LiGaO₂ substrate, Journal of Alloys and Compounds 1036, 182179(2025).

3. Pengkun Li, Lilin Wang*, Chang Liu, Chunyu Lee, Shujing Sun, Zhicheng Zhang, Chenlong Chen, Epitaxial growth of bottom-crosslinked ZnGa2O4 nanowire arrays on c-plane GaN/Al₂O₃ substrate, Journal of Alloys and Compounds 1008, 176840(2024).

4. Lilin Wang, Pengkun Li*, Chunyu Lee, Shujing Sun, Nanzhen Ji, He Chen, Mitch M. C. Chou*, Chenlong Chen*, Scalable nano-integration strategy: Controllable three-dimensional monocrystalline GaN nanostructures from nanobelts to nanonetwork, Journal of Alloys and Compounds 976, 173373(2024).

5. Pengkun Li, LiLin Wang*, He Chen, Nanzheng Ji, Chunyu Lee, Shujing Sun, Zhicheng Zhang, Mitch M.C. Chou*, Chenlong Chen*, Highly Controllable Epitaxial Growth of High-Density Nonpolar GaN Nanorod Arrays, Crystal Growth & Design 24, 3055(2024).

6. Lilin Wang, Pengkun Li*, Kang Li, Difei Xue, Kai Peng, Zhicheng Zhang, Shujing Sun, Chenlong Chen, Controlled Epitaxial Growth of Vertically Well-Aligned ZnGa₂O₄ Nanowire Arrays on Sapphire via a Novel Vapor?Liquid?Solid Process, Crystal Growth & Design 24, 9763(2024).

7. Pengkun Li, Xueli Han, Duanyang Chen*, Qinglin Sai, Hongji Qi*, Electrical and optical properties and defects of (100)- and (001)-oriented V-doped β-Ga₂O₃ crystals grown by EFG, Materials Science in Semiconductor Processing 153, 107159(2023).

8. Pengkun Li, Xueli Han, Duanyang Chen*, Qinglin Sai, Hongji Qi*, Controllability of β-Ga₂O₃ single crystal conductivity by V doping, CrystEngComm 24, 5588(2022).

9. Pengkun Li, Xueli Han, Duanyang Chen*, Qinglin Sai, Hongji Qi*, Effect of air annealing on the structural, electrical, and optical properties of V-doped β-Ga₂O₃ single crystals, Journal of Alloys and Compounds 908, 164590(2022).

10.   Pengkun Li, Yuzhe Bu, Duanyang Chen*, Qinglin Sai, Hongji Qi*, Investigation of the crack extending downward along the seed of the β-Ga₂O₃ crystal grown by the EFG method, CrystEngComm 23, 6300(2021).