Kun Wang

 Assistant research fellow

Email: k.wang@hnas.ac.cn

Kun Wang is currently an assistant research fellow at the Micius laboratory, specializing in wide-bandgap semiconductor devices and ferroelectric materials. His primary research focuses on: (1) the design and development of GaN-based radio frequency power devices; (2) investigations of HfO2-based ferroelectric thin films and their device applications; and (3) the design and development of metal-oxide thin-film transistors. He has participated in several key research initiatives, including National Key Research and Development Plan (MOST) and JD projects in Hubei Province. He has authored and co-authored multiple SCI-indexed papers as first author and corresponding author in prestigious journals such as Chemical Engineering Journal, IEEE Electron Device Letters, and IEEE Transactions on Electron Devices.

Education Background

Sep. 2016 - Jun. 2020

Shandong university (Weihai)

Bachelor of science in applied physics

Sep. 2020 - Jun. 2022
Wuhan university
Master of engineering in microelectronics and solid-state electronics

Sep. 2022 - Jun. 2025
Wuhan university
Doctor of engineering in microelectronics and solid-state electronics

 Work Experience

Jun. 2025 - Present

Micius laboratory

Assistant research 

 Publications and patents in the past five years

Kun Wang, Jiaxian Wan, Keyue Chen, Zexin Tu, Hao Wu*, Chang Liu*. Hf_0.5Zr_0.5O₂ based ferroelectric gate AlGaN/GaN HEMTs with steep subthreshold swings. IEEE Transactions on Electron Devices 70(11): 6082-6085(2023).

Kun Wang, Sizhe Li, Liwei Ji, Jiaxian Wan, Zexin Tu, Hao Wu*, Chang Liu*. Atomic layer deposited ZnO negative capacitance thin-film transistors with Hf_0.5Zr_0.5O₂-based ferroelectric gates. IEEE Electron Device Letters 45(12): 2399-2402(2024).

Kun Wang, Jiaxian Wan, Liwei Ji, Zexin Tu, Zhiyv Zeng, Hao Wu*, Chang Liu*. Multilayer nanolaminate Hf_0.5Zr_0.5O₂thick films with high endurance and remnant polarization. Chemical Engineering Journal 510(15): 161787(2025)