Kun Wang

 Assistant research fellow

Email: k.wang@hnas.ac.cn

Kun Wang is currently an assistant research fellow at the Micius laboratory, specializing in wide-bandgap semiconductor devices and ferroelectric materials. His primary research focuses on: (1) the design and development of GaN-based radio frequency power devices; (2) investigations of HfO2-based ferroelectric thin films and their device applications; and (3) the design and development of metal-oxide thin-film transistors. He has participated in several key research initiatives, including National Key Research and Development Plan (MOST) and JD projects in Hubei Province. He has authored and co-authored multiple SCI-indexed papers as first author and corresponding author in prestigious journals such as Chemical Engineering Journal, IEEE Electron Device Letters, and IEEE Transactions on Electron Devices.

Education Background

Sep. 2016 - Jun. 2020

Shandong university (Weihai)

Bachelor of science in applied physics

Sep. 2020 - Jun. 2022
Wuhan university
Master of engineering in microelectronics and solid-state electronics

Sep. 2022 - Jun. 2025
Wuhan university
Doctor of engineering in microelectronics and solid-state electronics

Work Experience

Jun. 2025 - Present

Micius laboratory

Assistant research fellow

Awards and Honors

Outstanding Student Scholarship of Shandong University
Excellent Graduate of Shandong University (Class of 2020)
Academic Excellence Scholarship of Wuhan University
Innovation Practice Advanced Individual of Wuhan University
Excellent Graduate of Wuhan University (Class of 2025)

Publications and patents in the past five years

Kun Wang, Jiaxian Wan, Keyue Chen, Zexin Tu, Hao Wu*, Chang Liu*. Hf_0.5Zr_0.5O₂ based ferroelectric gate AlGaN/GaN HEMTs with steep subthreshold swings. IEEE Transactions on Electron Devices 70(11): 6082-6085(2023).

Kun Wang, Sizhe Li, Liwei Ji, Jiaxian Wan, Zexin Tu, Hao Wu*, Chang Liu*. Atomic layer deposited ZnO negative capacitance thin-film transistors with Hf_0.5Zr_0.5O₂-based ferroelectric gates. IEEE Electron Device Letters 45(12): 2399-2402(2024).

Kun Wang, Jiaxian Wan, Liwei Ji, Zexin Tu, Zhiyv Zeng, Hao Wu*, Chang Liu*. Multilayer nanolaminate Hf_0.5Zr_0.5O₂thick films with high endurance and remnant polarization. Chemical Engineering Journal 510(15): 161787(2025)

Kun Wang, Xue Chen, Zhiyu Zeng, Xi Su, Tao Guo, Zexin Tu, Jiaxian Wan, Liwei Ji, Hao Wu, Chang Liu. High performance annealing-free thin film transistors with 7-nm In_0.72Ga_0.28O/13-nm In_0.46Ga_0.54O homojunction channel. Applied Physics Letters 127(8): 092105(2025).

Enkai Guo, Yifu He, Fen Zhong, Bowen Fu, Kun Wang, Guangxu Cai, Changzhong Jiang, Feng Ren. Preparing Al2O₃/TiO₂ nano-multilayers on the surface of FeAl/Al₂O₃ coating as tritium permeation barrier. Nuclear Fusion 65(1): 016061(2025).

Zexin Tu, Kun Wang, Liwei Ji, Jiaxian Wan, Qiren Luo, Hao Wu, Chang Liu. SnSe ambipolar thin film transistor arrays with copper-assisted exfoliation. Applied Surface Science 617: 156517(2023).

Yingzhao Geng, Xu Li, Kun Wang, Zhanheng Yan, Zhe Liu, Yunjie Ping, Hao Wu, Qianhui Mao, Haidong Li, Chunqing He, Libing Qian. Atomically smooth sulfonated poly(ether ether ketone) thin films for high-performance protonic field-effect transistors. Chemical Engineering Science 323(15): 123226(2026).