Huang Anhua

Assistant Researcher

Email:ahhuang@hnas.ac.cn

Huang Anhua, Assistant Researcher at the Mozi Laboratory, mainly studies the electronic structure and transport properties of semiconductor materials and two-dimensional materials using the tight-binding model, k·p method, and first-principles calculations. His main research directions include: (1) Prediction and theoretical calculation of two-dimensional topological insulators; (2) Study on light-induced topological phase transitions based on Floquet theory; (3) Research and development of Technology Computer Aided Design (TCAD) simulation software for semiconductor processes and devices; (4) Simulation calculation of transport properties based on the non-equilibrium Green's function method. He has participated in the NSFC General Program and the Chinese Academy of Sciences (CAS) Basic and Interdisciplinary Frontier Scientific Research Pilot Project. He has published 4 SCI papers in international journals as the first author and co-author.

Education Background

2015.09-2019.06 Bachelor of Microelectronics Science and Engineering in Xiamen University.

2019.09-2024.06 Doctor of Science in Condensed Matter Physics in Science in University of Chinese Academy of Sciences & Institute of Semiconductor, CAS.

Work Experience

2024.07-2025.07 Application Engineer and Intelligent Application Engineer in Dawning Information Industry Co., Ltd.

2025.08-Present Assistant Researcher in Mozi Laboratory.

Research grant

CAS Basic and Interdisciplinary Frontier Scientific Research Pilot Project (2023-2028), Participant, In progress.

NSFC General Program: Theoretical Research on Excitonic Insulators in Type-II Semiconductor Heterojunctions (2020-2023), Participant, Completed.

NSFC Key Program: Regulation of Quantum Hall States Based on Interface Coupling (2023-2026), Participant, In progress.

Publications and patents in the past five years

1.Anhua huang, Shasha Ke, Ji-Huan Guan, Jun Li and Wen-Kai Lou*, Strain induced topological phase transition in graphene nanoribbons. Phys. Rev. B 109,045408 (2024).

2.Anhua huang,Shasha Ke,Ji-Huan Guan, Jun Li andWen-Kai Lou*, Floquet-Engineering Topological Phase Transition in Graphene Nanoribbons by Light, Chinese Phys. Lett.41097302 (2024).

3.Anhua huang, Shasha Ke, Ji-Huan Guan and Wen-Kai Lou*, Tight-binding model and quantum transport with disorder for 1T’transition metal dichalcogenides. J. Appl. Phys. 134, 084302 (2023).

4.Ma Zhou, Sheng-Bin Yu, An-hua Huang, Li Wang, and Kai Chang*, Effective k.p model of monolayer 1T'-MoS2 under perpendicular electric field, Phys. Rev.B 108, 035412 (2023).