- Center for Manufacturing EDA
- Center for Narrow Bandgap Semiconductors
- Center for Wide & Ultra-Wide Bandgap Semiconductor
- Center for Future Electronics & Integrated Circuits
- Center for Advanced Semiconductor Equipment
- Center for Superconducting Quantum Chips & Quantum Cloud Computing
- Center for High-Performance Storage Engineering

Liu, Chang
Professor and Executive Deputy Director
Email: chang.liu@hnas.ac.cn
Sex: Male
Nationality: Chinese
Post address: Room 801 (Building of Henan Academy of Science), Micius Laboratory, Zhengzhou 450046, China
Cellphone: +86 13396081488
As a principal investigator holding 30 grants, 200 publications and 24 patents
Chair and co-chair of 8 international conferences and bilateral workshops
Current Applied Physics, Topical Editor(Physics of Semiconductor Devices)
Nanoscale Research Letters, Lead Guest Editor
Education Background
1980 - 1984: Zhejiang University (China), Major of Electronic Physics and Devices, B. Sc. in Eng.
1984 - 1987: Zhejiang University (China), Major of Electronic Physics and Devices, M. Sc. In Eng.
1996 - 1999: University Augsburg (Germany), Major of Experimental Physics, Dr. rer. nat.
Work Experience
1987-1991: Assistant Lecturer, Department of Physics, Wuhan University, China
1991-1996: Lecturer, Department of Physics, Wuhan University, China
1996-1999: Research Assistant, Institute for Physics, University of Augsburg, Germany
2000-2001: Research Fellow, Nuclear and Technological Institute, Portugal
2001-2003: Research fellow, National Institute of Advanced Industrial Science and Technology, Japan
2003-2022: Professor & Head, School of Physics and Technology, Wuhan University, China
2023-now: Professor and Executive Deputy Director, Micius Laboratory, China
Selected research grants as a PI
1.National Key Rresearch and Development Plan of the Ministry of Science and Technology: “Optical coupling mechanism and broadband absorption in surface plasmon nanostructures”; Grant number:2017YFA0205802; 2017-2022; 8.55 mil. RMB; Completed and passed the check by the MOST.
2.Natural Science Foundation of China: “Preparation of n-channel field effect transistors of Ga2O3 by Ion implantation”; Grant Number: 11875212; 2019-2022; 777,000 RMB; Completed and passed the check by the NSFC.
3.Natural Science Foundation of China: “Study on the preparation of m-plane ZnO/Si ultraviolet LEDs by ALD and the Enhancement of emission by surface plasmon resonance of metal nanoparticles”; Grant Number: 11574235; 2016-2019; 872,760 RMB; Completed and passed the check by the NSFC.
Selected publications and patents in past five years
Papers
1.Liwei Ji, Zexin Tu, Zhiyu Zeng, Hao Wu, Chang Liu*, Multilayer nanolaminate Hf0.5Zr0.5O2thick films with high endurance and remnant polarization, Chemical Engineering Journal 510, 161787 (2025).
2.Kun Wang, Sizhe Li, Liwei Ji, Jiaxian Wan, Zexin Tu, Hao Wu, Chang Liu*, Atomic layer deposited ZnO negative capacitance thin-film transistors with Hf0.5Zr0.5O2-based ferroelectric gates, IEEE Electron Devices Letters 45, 2399 (2024).
3.Kun Wang, Jiaxian Wan, Keyue Chen, Zexin Tu, Hao Wu, and Chang Liu*, Hf0.5Zr0.5O2-based ferroelectric gate AlGaN/GaN HEMTs with steep subthreshold swings,IEEE Transaction on Electron Devices 70, 6082 (2023).
4. Yuanhang Yang, Siyang Cheng, Xueliang Zhu, Sheng Li, Zhuo Zheng, Kai Zhao, Liwei Ji, Ruiming Li, Yong Liu, Chang Liu, Qianqian Lin, Ning Yan and Zhiping Wang, Inverted perovskite solar cells with over 2,000h operational stability at 85°C using fixed charge passivation, Nature Energy 10,1038 (2023).
5. Liwei Ji,Xue Chen,Xi Su,Jiaxian Wan,Zexin Tu,Hao Wu and Chang Liu*, Influence of indium doping on electrical performance of gallium oxide thin-film transistors,Applied Physics Letters 122, 202105 (2023).
6. Zexin Tu, Kun Wang, Liwei Ji, Jiaxian Wan, Qiren Luo, Hao Wu, Chang Liu*, SnSe ambipolar thin film transistor arrays with copper-assisted exfoliation, Applied Surface Science 617, 156517 (2023).
7.Heng Zhang, Hao Wu, Xiaowen Li, Jiaming Hao, Qunqing Li, Zhiqiang Guan, Hongxing Xu, and Chang Liu*, Super broadband mid-infrared absorbers with ultrathin folded highly-lossy films,Journal of Colloid and Interface Science 629, 254 (2023).
8.Liu Xinxing, Zhang Junjun, Tang Liting, Gong Junbo, Li Wang, Ma Zengyang, Tu Zexin Li Yanyan, Li Ruiming, Hu Xuzhi, Shen Chen, Wang He, Wang Zhiping, Lin Qianqian, Fang Guojia, Wang Sheng, Liu Chang, Zhang Zengming, Li Jianmin, Xiao Xudong*, Over 28% efficiency perovskite/Cu(InGa)Se2 tandem solar cells: highly efficient sub-cells and their bandgap matching, Energy & Environmental Science 16, 5029 (2023).
9. Yu Liu, Tao Guo, Qin Liu, Fangyu Xiong, Meng Huang, Yongkang An, John Wang, Qinyou An, Chang Liu*, Liqiang Mai*,Ultrathin ZrO2 coating layer regulates Zn deposition and raises long-life performance of aqueous Zn batteries,Materials Today Energy 28, 101056 (2022).
10. Sizhe Li, Xue Chen, Li Liu, Zhiyu Zeng, Sheng Chang, Hao Wang, Hao Wu, Shibing Long, Chang Liu*, Micron channel length ZnO thin film transistors using bilayer electrodes, Journal of Colloid and Interface Science 622, 769 (2022).
11. Jiaxian Wan, Xue Chen, Liwei Ji, Zexin Tu, Hao Wu, Chang Liu*, Ferroelectricity of Hf0.5Zr0.5O2 thin films free from the influence of electrodes by using Al2O3 capping layers, IEEE Transaction on Electron Devices 69, 1805 (2022).
12. Haihua Zheng, Zhongpo Zhou, Ti Wang, Pengbin Gui, Hao Wu, Chang Liu*, Ultra-bright pure green perovskite light-emitting diodes, Applied Physics Letters 118, 262102 (2021).
13. Xue Chen, Jiaxian Wan, Hao Wu, Chang Liu*, Effective encapsulation of ZnO thin film transistors controlled by thermal energy, Applied Surface Science 548, 149253 (2021).
14. Wei Dai, Weikang Liu, Jian Yang, Chao Xu, Alessandro Alabastri, Chang Liu, Peter Nordlander, Zhiqiang Guan*, Hongxing Xu*, Giant photothermoelectric effect in silicon nanoribbon photodetectors, Light: Science & Applications 9, 120 (2020).
15. Tao Guo, Hao Wu, Xue Chen, Qi Tang, Jiaxian Wan, Quanbing Guo, Shuangfeng Jia, and Chang Liu*, van der Waals integration of AZO/MoS2 ohmic junctions toward high-performance transparent 2D electronics, Journal of Materials Chemitry C 8, 9960 (2020).
16. Hui Li, Heng Zhang, Hao Wu, Jiaming Hao, and Chang Liu*, Tree-like structures of InN nanoparticles on agminated anodic aluminum oxide by plasma-assisted reactive evaporation, Applied Surface Science 503, 144309 (2020).
17. Qi Tang, Xue Chen, Jiaxian Wan, Hao Wu, and Chang Liu*, Influence of Ga doping on electrical performance and stability of ZnO thin-film transistors prepared by atomic layer deposition, IEEE Transaction on Electron Devices 67, 3129 (2020).
18. Fang Yao, Jiali Peng, Ruiming Li, Wenjing Li, Pengbin Gui, Borui Li, Chang Liu, Chen Tao, Qianqian Lin, and Guojia Fang, Room-temperature liquid diffused separation induced crystallization for high-quality perovskite single crystals, Nature Communications 11, 1194 (2020).
19. Hui Li, Liang Wu, Heng Zhang, Wei Dai, Jiaming Hao, Hao Wu, Feng Ren, and Chang Liu*, Self-assembly of carbon black/AAO templates on nanoporous Si for broadband infrared absorption, ACS Applied Materials & Interfaces 12, 4081 (2020).
20. Xue Chen, Jiaxian Wan, Hao Wu, and Chang Liu*, ZnO bilayer thin film transistors using H2O and O3 as oxidants by atomic layer deposition, Acta Materialia 185, 204 (2020).
Patents
1.Heng Zhang, Chang Liu and Hao Wu, A preparation method of an Al2O3 hollow sphere shell array; Patent number: ZL201811051213.1; Date of authorization proclamation: Nov. 3, 2020.
2.Chang Liu, Heng Zhang, Hao Wu and Hui Li, An infrared wide-spectrum light absorber based on semiconductor materials; Patent number: ZL201811119513.9; Date of authorization proclamation: Sept. 8, 2020.
3.Hao Wu, Xi Su and Chang Liu, A method for preparing ohmic contact transparent electrodes on p-type GaN; Patent number: ZL201811132908.2; Date of authorization proclamation: Jun. 7, 2022.
4.Chang Liu, Hui Li, Heng Zhang, Dingbo Zhang and Hao Wu, Infrared absorption by doped silicon and its preparation method; Patent number: ZL201910123976.0; Date of authorization proclamation: Sept. 3, 2021.
5.Chang Liu, Hui Li, Hao Wu and Heng Zhang, Broadband anti-reflection thin films based on anodic aluminum oxide template and their preparation method; Patent number: ZL201910136820.6; Date of authorization proclamation: Dec. 10, 2019.
6.Chang Liu, Xi Su and Hao Wu, A semiconductor heterojunction light-emitting chip that can directly emit white light; Patent number: ZL201910550394.0; Date of authorization proclamation: Feb. 1, 2022.
7.Chang Liu and Ying Lin, A method for preparing Micro-LEDs; Patent number: ZL201911045204.6; Date of authorization proclamation: Apr. 12, 2022.
8.Chang Liu, Haihua Zheng, Hao Wu and Ti Wang, An efficient green light LED based on perovskite micrometer plates and its preparation method; Patent number: ZL202110852217.5; Date of authorization proclamation: Jul. 26, 2024.

