Xu Yang

Process Engineer

Email:Y.Xu@hnas.ac.cn

Xu Yang, Process Engineer at Micius Laboratory, primarily engaged in the growth and characterization research of III-V nitrides. Skilled in operating various semiconductor-oriented instruments: (1) Thoroughly understand the principles of Molecular Beam Epitaxy (MBE), independently and skillfully operate MBE equipment, and perform excellent maintenance on such equipment. (2) Possesses extensive experience in growing GaN-based semiconductor materials and devices using MBE. (3) Independently and skillfully operate High-Resolution X-ray Diffraction (HRXRD), Scanning Electron Microscopy (SEM), Photoluminescence (PL), and Rapid Thermal Annealing (RTA), and effectively analyze experimental data. (4) Understand the principles and growth techniques of Atomic Layer Deposition (ALD) and Electron Beam Evaporation (EBE). (5) Familiar with and frequently use characterization methods including XRD, AFM, SEM, Raman, PL, SEM, Hall, XPS, and EDS. (6) Proficient in operating systems such as Windows, Unix, and Linux. (7) Proficient in office and graphic software including image processing software, function plotting software, and mathematical software. Collaboratively published 6 high-level papers.

Education Background

2006.09-2010.06 Wuhan University, Physics Base Class, Bachelor of Science

2010.09-Present Wuhan University, Condensed Matter Physics, Ph.D. (combined Master-Doctoral program)

Work Experience

2025.06-Present Micius Laboratory, Process Engineer

1. C. Chen, T. Wang, H. Wu, H. Zheng, J. B. Wang, Y. Xu, and C. Liu*, Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices, [J]. Nanoscale Research Letters, 10, 100 (2015)

2. Z. W. Ai, Y. Wu, H. Wu, T. Wang, C. Chen, Y. Xu and C. Liu*, Enhanced band-edge photoluminescence from ZnO-passivated ZnO nanoflowers by atomic layer deposition, [J]. Nanoscale Research Letters, 8, 105 (2013).

3. T. Wang, H. Wu, H. Zheng, J. B. Wang, Z. Wang, C. Chen, Y. Xu, and C. Liu*, Nonpolar light emitting diodes of m-plane ZnO on c-plane GaN with the Al2O3 interlayer, [J]. Applied Physics Letters, 102, 141912 (2013).

4. Wei Wang, Xuewei Gan, Yang Xu, Ti Wang, Hao Wu, Chang Liu*, High-quality n-type aluminum gallium nitride thin films Grown by interrupted deposition and in-situ thermal annealing, [J]. Materials Science in Semiconductor Processing, 30 (2015).

5. Yingzhao Geng, Yang Xu, Xu Li , Xiao Wang , Hao Wu*, Chang Liu*, Van der Waals epitaxy GaN on fluorophlogopite mica for transfer-free flexible UV photodetector, [J]. Materials Letters, 385, 15 April 2025, 138185

6. Yingzhao Geng; Xu, Y; Li, X; Wang, X ; Wu, H*; Liu, C*; Graphene-assisted remote epitaxy wrinkle-free GaN films on flexible mica, [J]. Journal of Alloys and Compounds,  1005, 15 November 2024, 176032