The Narrow Bandgap Semiconductor Research Center has developed a complete set of technologies for high-temperature SPAD chips, including chip design, thin-film growth, ultra-thin wafer processing, and testing. These advancements effectively reduce the dark count rate （DCR）at high temperatures and improve detection efficiency, overcoming low-temperature opertaion limitations. The single-core SPAD prototype meets performance requirements at 0 °C, with key metrics competitive to products on the international market and compliant with quantum key distribution (QKD) system requirements.

In addition, breakthroughs have been made in high-density array heterogeneous integration, inter-channel crosstalk suppression, and low-temperature packaging technologies.  A  multi-channel detector prototype featuring high key distribution rate and high time resolution has been  developed. The achievements fill a domestic technological gap, offering high integration levels that contribute to system miniaturization, modularization, and cost reduction.